номер части J309 категории JFET RoHS Техническая спецификация J309 Описание JFET JFET N-Channel -25V 10mA 360mW 3.27mW
категории JFET Configuration Single Drain-Source Current at Vgs=0 30 mA Forward Transconductance - Min 10000 uS Gate-Source Cutoff Voltage - 4 V Id - Continuous Drain Current 1 nA Mounting Style Through Hole Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 360 mW Series J309 Technology SI Transistor Polarity N-Channel Type JFET Unit Weight Vds - Drain-Source Breakdown Voltage 10 V Vgs - Gate-Source Breakdown Voltage - 25 V