номер части UJ3N120035K3S категории JFET RoHS Техническая спецификация UJ3N120035K3S Описание JFET 35mOhm 1200V SiC Normally-On JFET
категории JFET Configuration Single Id - Continuous Drain Current 63 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 429 W Product Type JFETs Rds On - Drain-Source Resistance 35 mOhms Series UJ3N Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1200 V Vgs - Gate-Source Breakdown Voltage 20 V