номер части TK17A80W,S4X категории MOSFET RoHS Техническая спецификация TK17A80W,S4X Описание MOSFET N-Ch 800V 2050pF 32nC 17A 45W
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Height 15 mm Id - Continuous Drain Current 17 A Length 10 mm Maximum Operating Temperature + 150 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Tube Pd - Power Dissipation 45 W Product Type MOSFET Qg - Gate Charge 32 nC Rds On - Drain-Source Resistance 250 mOhms Rise Time 24 ns Series TK17A80W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 80 ns Typical Turn-On Delay Time 58 ns Unit Weight Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V Width 4.5 mm