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TK100A10N1,S4X

TK100A10N1,S4X
Изображения только для справки
номер части
TK100A10N1,S4X
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Height
15 mm
Id - Continuous Drain Current
100 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
140 nC
Rds On - Drain-Source Resistance
3.1 mOhms
Series
TK100A10N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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последние обзоры

Напишите свой собственный Reivew
Thanks for your feedback!
goods very well received very good quality
High Quality driver, works excellent. It came to Moscow for 7 days.
The goods are OK, thank you dealers.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Больше

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