номер части TK11A65W,S5X категории MOSFET RoHS Техническая спецификация TK11A65W,S5X Описание MOSFET MOSFET NChannel 0.33ohm DTMOS
категории MOSFET Channel Mode Enhancement Configuration Single Height 15 mm Id - Continuous Drain Current 11.1 A Length 10 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Pd - Power Dissipation 35 W Product Type MOSFET Qg - Gate Charge 25 nC Rds On - Drain-Source Resistance 330 mOhms Series TK11A65W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.5 V Width 4.5 mm