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TK12A60W,S4VX

TK12A60W,S4VX
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номер части
TK12A60W,S4VX
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15 mm
Id - Continuous Drain Current
11.5 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
23 ns
Series
TK12A60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.7 V
Width
4.5 mm

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последние обзоры

Напишите свой собственный Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
All very good. AND packed as you have everything in good condition.
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