номер части TK16J60W,S1VQ категории MOSFET RoHS Техническая спецификация TK16J60W,S1VQ Описание MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 5 ns Height 20 mm Id - Continuous Drain Current 15.8 A Length 15.5 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 38 nC Rds On - Drain-Source Resistance 160 mOhms Rise Time 25 ns Series TK16J60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 50 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 4.5 mm