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TK16N60W,S1VF

TK16N60W,S1VF
Изображения только для справки
номер части
TK16N60W,S1VF
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
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Характеристики

категории
MOSFET
Configuration
Single
Fall Time
5 ns
Height
20.95 mm
Id - Continuous Drain Current
15.8 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16N60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.02 mm

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последние обзоры

Напишите свой собственный Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Seems well have not tested
Looks good
Received very good
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
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