номер части TK090A65Z,S4X категории MOSFET RoHS Техническая спецификация TK090A65Z,S4X Описание MOSFET PWR MOSFET PD=45W F=1MHZ
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 4 ns Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220SIS-3 Packaging Tube Pd - Power Dissipation 45 W Product Type MOSFET Qg - Gate Charge 47 nC Rds On - Drain-Source Resistance 90 mOhms Rise Time 30 ns Series TK090A65Z Technology SI Tradename DTMOSVI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 60 ns Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 3 V