номер части TK22A10N1,S4X категории MOSFET RoHS Техническая спецификация TK22A10N1,S4X Описание MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V
категории MOSFET Channel Mode Enhancement Configuration Single Height 15 mm Id - Continuous Drain Current 22 A Length 10 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Pd - Power Dissipation 30 W Product Type MOSFET Qg - Gate Charge 28 nC Rds On - Drain-Source Resistance 11.5 mOhms Series TK22A10N1 Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 4 V Width 4.5 mm