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TK12P50W,RQ

TK12P50W,RQ
Изображения только для справки
номер части
TK12P50W,RQ
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET PWR MOSFET PD=100W F=1MHZ
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Id - Continuous Drain Current
11.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
DPAK-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
340 mOhms
Rise Time
23 ns
Series
TK12P50W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Vds - Drain-Source Breakdown Voltage
500 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.7 V

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