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TK20C60W,S1VQ

TK20C60W,S1VQ
Изображения только для справки
номер части
TK20C60W,S1VQ
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
10.4 mm
Id - Continuous Drain Current
20 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20C60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

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последние обзоры

Напишите свой собственный Reivew
Very good!
Hello! Order received, very happy. Thank you very much!
Perfectly.
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Больше

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Ключевые слова к TK20

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