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BF 888 H6327

BF 888 H6327
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номер части
BF 888 H6327
категории
RF Bipolar Transistors
RoHS
Техническая спецификация
BF 888 H6327
Описание
RF Bipolar Transistors RF BIP TRANSISTOR
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Характеристики

категории
RF Bipolar Transistors
Collector- Emitter Voltage VCEO Max
4 V
Configuration
Single
Continuous Collector Current
30 mA
DC Collector/Base Gain hfe Min
250
Emitter- Base Voltage VEBO
13 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
160 mW
Product Type
RF Bipolar Transistors
Series
BF888
Technology
SI
Transistor Polarity
NPN
Transistor Type
Bipolar Power
Type
RF Bipolar Power

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everything as it is written in the description of the same deductible prodovtsu deserved
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
My package arrived wet, not know where occurs this fact, but working all right
Quick delivery. Secure packing. Excellent product. Thank you
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
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