- номер части
- D44H11G
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT 10A 80V 50W NPN
D44H11G
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 80 V
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector-Emitter Saturation Voltage
- 1 V
- Configuration
- Single
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 60
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 50 MHz
- Height
- 15.75 mm
- Length
- 10.53 mm
- Maximum DC Collector Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 70 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- D44H11
- Technology
- SI
- Transistor Polarity
- NPN
- Unit Weight
- Width
- 4.83 mm
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последние обзоры
Teşekkürler
Ashir Hussain
fast delivery, item as described, thanks!!
Sandra Scheck
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Вам также может понравиться
Люди смотрят D44H11G и покупают
D44H11G Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к D44H
- D44H11G интегрированный
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- D44H11G Техническая спецификация
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- D44H11G Технические данные
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