номер части D44H11 PBFREE категории Bipolar Transistors - BJT RoHS Техническая спецификация D44H11 PBFREE Описание Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
категории Bipolar Transistors - BJT Collector- Emitter Voltage VCEO Max 80 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current 8 A DC Collector/Base Gain hfe Min 40 at 4 A, 1 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 60 MHz Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case DPAK-3 Packaging Bulk Pd - Power Dissipation 1.75 W Product Type BJTs - Bipolar Transistors Series D44H11 Technology SI Transistor Polarity NPN, PNP