номер части ZUMT591TA категории Bipolar Transistors - BJT RoHS Техническая спецификация ZUMT591TA Описание Bipolar Transistors - BJT PNP Medium Power
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 80 V Collector- Emitter Voltage VCEO Max 60 V Configuration Single Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 150 MHz Height 1 mm Length 2.2 mm Maximum DC Collector Current 1 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-323-3 Packaging Reel Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Series ZUMT591 Technology SI Transistor Polarity PNP Unit Weight Width 1.26 mm