номер части ZUMT617TA категории Bipolar Transistors - BJT RoHS Техническая спецификация ZUMT617TA Описание Bipolar Transistors - BJT NPN Super323
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 15 V Collector- Emitter Voltage VCEO Max 15 V Collector-Emitter Saturation Voltage 205 mV Configuration Single Continuous Collector Current 1.5 A DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V, 75 at 3 A, 2 V, 30 at 5 A, 2 V DC Current Gain hFE Max 200 at 10 mA, 2 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 180 MHz Height 1 mm Length 2.2 mm Maximum DC Collector Current 1.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-323-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Series ZUMT617 Technology SI Transistor Polarity NPN Unit Weight Width 1.26 mm