номер части TK10E80W,S1X категории MOSFET RoHS Техническая спецификация TK10E80W,S1X Описание MOSFET PWR MOSFET PD=130W F=1MHZ
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Id - Continuous Drain Current 9.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 19 nC Rds On - Drain-Source Resistance 550 mOhms Rise Time 35 ns Series TK10E80W Technology SI Tradename DTMOSVI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 120 ns Typical Turn-On Delay Time 65 ns Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 3 V