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QH8KA4TCR

QH8KA4TCR
Изображения только для справки
номер части
QH8KA4TCR
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 30V Nch+Nch Si MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
20 ns, 20 ns
Forward Transconductance - Min
7 S, 7 S
Id - Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
12 nC, 12 nC
Rds On - Drain-Source Resistance
12.5 mOhms
Rise Time
20 ns, 20 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
50 ns, 50 ns
Typical Turn-On Delay Time
20 ns, 20 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
500 mV

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последние обзоры

Напишите свой собственный Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Perfectly.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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