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TK10A80E,S4X

TK10A80E,S4X
Изображения только для справки
номер части
TK10A80E,S4X
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
40 ns
Series
TK10A80E
Technology
SI
Tradename
MOSVIII
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
80 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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последние обзоры

Напишите свой собственный Reivew
fast delivery, item as described, thanks!!
packed pretty good, all is ok,-seller.
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Больше

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