номер части TK100E10N1,S1X категории MOSFET RoHS Техническая спецификация TK100E10N1,S1X Описание MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
категории MOSFET Configuration Single Height 15.1 mm Id - Continuous Drain Current 207 A Length 10.16 mm Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Reel Packaging Cut Tape Product Type MOSFET Qg - Gate Charge 140 nC Rds On - Drain-Source Resistance 3.4 mOhms Series TK100E10N1 Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 10 V Width 4.45 mm