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TK10Q60W,S1VQ

TK10Q60W,S1VQ
Изображения только для справки
номер части
TK10Q60W,S1VQ
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
6.1 mm
Id - Continuous Drain Current
9.7 A
Length
6.65 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-251-3
Pd - Power Dissipation
80 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
327 mOhms
Rise Time
22 ns
Series
TK10Q60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
2.3 mm

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последние обзоры

Напишите свой собственный Reivew
Thanks for your feedback!
goods very well received very good quality
High Quality driver, works excellent. It came to Moscow for 7 days.
The goods are OK, thank you dealers.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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