номер части PZT2907AT1G категории Bipolar Transistors - BJT RoHS Техническая спецификация PZT2907AT1G Описание Bipolar Transistors - BJT 600mA 60V PNP
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 60 V Collector- Emitter Voltage VCEO Max - 60 V Collector-Emitter Saturation Voltage - 1.6 V Configuration Single Continuous Collector Current - 0.6 A DC Current Gain hFE Max 300 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Height 1.57 mm Length 6.5 mm Maximum DC Collector Current 0.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 1.5 W Product Type BJTs - Bipolar Transistors Series PZT2907A Technology SI Transistor Polarity PNP Unit Weight Width 3.5 mm