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D2010UK

D2010UK
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номер части
D2010UK
категории
RF MOSFET Transistors
RoHS
Техническая спецификация
Описание
RF MOSFET Transistors RF MOSFET
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Характеристики

категории
RF MOSFET Transistors
Configuration
Single
Gain
10 dB
Height
5.08 mm
Id - Continuous Drain Current
8 A
Length
18.92 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
20 W
Package / Case
DP
Pd - Power Dissipation
8.3 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 7 V
Width
6.35 mm

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последние обзоры

Напишите свой собственный Reivew
it is safe and sound all, thank you seller!
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
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