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BF1105R,215

BF1105R,215
Изображения только для справки
номер части
BF1105R,215
категории
RF MOSFET Transistors
RoHS
Техническая спецификация
Описание
RF MOSFET Transistors Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab)
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Характеристики

категории
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

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последние обзоры

Напишите свой собственный Reivew
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
and whole all right. the features no more функционалу check.
Больше

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Ключевые слова к BF11

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