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BF1105R,215

BF1105R,215
Изображения только для справки
номер части
BF1105R,215
категории
RF MOSFET Transistors
RoHS
Техническая спецификация
Описание
RF MOSFET Transistors Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab)
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Характеристики

категории
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

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последние обзоры

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Quick delivery. Secure packing. Excellent product. Thank you
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