номер части TK100L60W,VQ категории MOSFET RoHS Техническая спецификация TK100L60W,VQ Описание MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
категории MOSFET Configuration Single Fall Time 125 ns Height 26 mm Id - Continuous Drain Current 100 A Length 20 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PL-3 Pd - Power Dissipation 797 W Product Type MOSFET Qg - Gate Charge 360 nC Rds On - Drain-Source Resistance 15 mOhms Rise Time 130 ns Series TK100L60 Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 690 ns Typical Turn-On Delay Time 230 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 5 mm