номер части TK10E60W,S1VX категории MOSFET RoHS Техническая спецификация TK10E60W,S1VX Описание MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 5.5 ns Height 15.1 mm Id - Continuous Drain Current 9.7 A Length 10.16 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Pd - Power Dissipation 100 W Product Type MOSFET Qg - Gate Charge 20 nC Rds On - Drain-Source Resistance 380 mOhms Rise Time 22 ns Series TK10E60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 4.45 mm