номер части TK100E06N1,S1X категории MOSFET RoHS Техническая спецификация TK100E06N1,S1X Описание MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
категории MOSFET Configuration Single Height 15.1 mm Id - Continuous Drain Current 1 mA Length 10.16 mm Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Product Type MOSFET Rds On - Drain-Source Resistance 1.9 mOhms Series TK100E06N1 Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Transistor Type 1 N-Channel Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 10 V Width 4.45 mm