- номер части
- D45H11
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT PNP Gen Pur Switch
D45H11
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- - 5 V
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector-Emitter Saturation Voltage
- 1 V
- Configuration
- Single
- Continuous Collector Current
- - 10 A
- DC Collector/Base Gain hfe Min
- 60
- Emitter- Base Voltage VEBO
- - 5 V
- Height
- 9.15 mm
- Length
- 10.4 mm
- Maximum DC Collector Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Pd - Power Dissipation
- 50 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- D45H11
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
- Width
- 4.6 mm
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последние обзоры
goods very well received very good quality
Fabrice Cubaynes
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Quickly came to CET, all in one package. Look at the rules
Earl Sault
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
D45H11 Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к D45H
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