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D45H11G

D45H11G
Изображения только для справки
номер части
D45H11G
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT 10A 80V 50W PNP
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
80 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
60
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
40 MHz
Height
15.75 mm
Length
10.53 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
70 W
Product Type
BJTs - Bipolar Transistors
Series
D45H11
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
4.83 mm

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последние обзоры

Напишите свой собственный Reivew
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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