- номер части
- D45H11FP
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT PNP GEN PUR SWITCH
D45H11FP
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector-Emitter Saturation Voltage
- - 1 V
- Configuration
- Single
- Continuous Collector Current
- - 10 A
- DC Collector/Base Gain hfe Min
- 40
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- - 20 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220FP-3
- Pd - Power Dissipation
- 36 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- D45H11FP
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
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последние обзоры
Works. Find the price of this product is very good
Maxim Krasnov
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Works. Recommend
Rajiv
Still not tasted, looks good. Fast Shipping, very good Price. Like again
Nils Dorigoni
No problem, with no contact, selectively checked a few pieces, such as running
Nic Ford
D45H11FP Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к D45H
- D45H11FP интегрированный
- D45H11FP RoHS
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- D45H11FP Технические данные
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