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2SA2012-TD-E

2SA2012-TD-E
Изображения только для справки
номер части
2SA2012-TD-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 5A 30V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 30 V
Collector- Emitter Voltage VCEO Max
- 30 V
Collector-Emitter Saturation Voltage
- 140 mV
Configuration
Single
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
560
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
350 MHz
Maximum DC Collector Current
- 5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.5 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2012
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

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Everything as it is written in the description of the same deductible prodovtsu deserved 5
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
the photo in comparison with cheap. Delivery fast
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