номер части VT6T12T2R категории Bipolar Transistors - BJT RoHS Техническая спецификация VT6T12T2R Описание Bipolar Transistors - BJT PNP+PNP -50VCEO-0.1A VMT6
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.15 V Configuration Dual Continuous Collector Current - 100 mA DC Collector/Base Gain hfe Min 0.9 DC Current Gain hFE Max 1.1 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current - 100 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Pd - Power Dissipation 150 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP