- номер части
- VT6T11T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
VT6T11T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- - 20 V
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector-Emitter Saturation Voltage
- - 120 mV
- Configuration
- Dual
- Continuous Collector Current
- - 200 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- - 5 V
- Gain Bandwidth Product fT
- 350 MHz
- Maximum DC Collector Current
- - 200 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- PNP
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последние обзоры
Perfectly.
Sensofar Tech, SL
The goods are OK, thank you dealers.
CHARLES SANTOS
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Babatunde Alli
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
VT6T11T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6T
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