- номер части
- VT6T1T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
VT6T1T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- - 20 V
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector-Emitter Saturation Voltage
- - 0.12 V
- Configuration
- Dual
- Continuous Collector Current
- - 200 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- - 5 V
- Gain Bandwidth Product fT
- 350 MHz
- Maximum DC Collector Current
- - 200 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- VT6T1
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- PNP
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последние обзоры
Everything is excellent! recommend this seller!
Stoyan Chaykov
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Great product. Arrived ahead of time. Thank you
Alexey Petrov
VT6T1T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6T
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