номер части TK1K9A60F,S4X категории MOSFET RoHS Техническая спецификация TK1K9A60F,S4X Описание MOSFET N-Ch TT-MOSIX 600V 30W 490pF 3.7A
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 15 ns Id - Continuous Drain Current 3.7 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220SIS-3 Packaging Tube Pd - Power Dissipation 30 W Product Type MOSFET Qg - Gate Charge 14 nC Rds On - Drain-Source Resistance 1.9 Ohms Rise Time 15 ns Series TK1K9A60F Technology SI Tradename MOSIX Transistor Polarity N-Channel Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 32 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2 V