номер части TK1K7A60F,S4X категории MOSFET RoHS Техническая спецификация TK1K7A60F,S4X Описание MOSFET TO-220SIS PD=35W 1MHz PWR MOSFET TRNS
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 17 ns Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220SIS-3 Packaging Tube Pd - Power Dissipation 35 W Product Type MOSFET Qg - Gate Charge 16 nC Rds On - Drain-Source Resistance 1.7 Ohms Rise Time 16 ns Technology SI Tradename MOSIX Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 55 ns Typical Turn-On Delay Time 33 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 4 V