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TK1K2A60F,S4X

TK1K2A60F,S4X
Изображения только для справки
номер части
TK1K2A60F,S4X
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch TT-MOSIX 600V 35W 740pF 6A
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Packaging
Tube
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
1.2 Ohms
Rise Time
16 ns
Series
TK1K2A60F
Technology
SI
Tradename
MOSIX
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
65 ns
Typical Turn-On Delay Time
35 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V

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последние обзоры

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