номер части R8002ANJFRGTL категории MOSFET RoHS Техническая спецификация R8002ANJFRGTL Описание MOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTS
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 70 ns Forward Transconductance - Min 0.5 s Id - Continuous Drain Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263S-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 62 W Product Type MOSFET Qg - Gate Charge 13 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 4.3 Ohms Rise Time 25 ns Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35 ns Typical Turn-On Delay Time 20 ns Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3 V