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R8002ANX

R8002ANX
Изображения только для справки
номер части
R8002ANX
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 10V Drive Nch MOSFET
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Характеристики

категории
MOSFET
Configuration
Single
Fall Time
70 ns
Id - Continuous Drain Current
2 A
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
35 W
Product Type
MOSFET
Qg - Gate Charge
12.7 nC
Rds On - Drain-Source Resistance
4.3 Ohms
Rise Time
20 ns
Series
R8002ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
17 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V

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последние обзоры

Напишите свой собственный Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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