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R8005ANX

R8005ANX
Изображения только для справки
номер части
R8005ANX
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 10V Drive Nch MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
41 ns
Forward Transconductance - Min
1 s
Height
4.8 mm
Id - Continuous Drain Current
5 A
Length
15.4 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
40 W
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
2.08 Ohms
Rise Time
17 ns
Series
R8005ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Power MOSFET
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
17 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
10.3 mm

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последние обзоры

Напишите свой собственный Reivew
Shipping a little 1 weeks, normal packing, the procedure is complete.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
All very good. AND packed as you have everything in good condition.
No problem, with no contact, selectively checked a few pieces, such as running
to seller thank you! all like the photo. not tried operation. seller store recommend.
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