номер части D2019UK категории RF MOSFET Transistors RoHS Техническая спецификация D2019UK Описание RF MOSFET Transistors Silicon DMOS RF FET 2.5W-28V-1GHz SE
категории RF MOSFET Transistors Configuration Single Gain 13 dB Height 2.18 mm Id - Continuous Drain Current 1 A Length 5.08 mm Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 2.5 W Package / Case SO-8 Pd - Power Dissipation 17.5 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 5 V Width 4.06 mm