- номер части
- D2013UK
- категории
- RF MOSFET Transistors
- RoHS
- Техническая спецификация
- Описание
- RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-1GHz SE
D2013UK
Изображения только для справки
Характеристики
- категории
- RF MOSFET Transistors
- Configuration
- Dual
- Gain
- 10 dB
- Id - Continuous Drain Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 20 W
- Package / Case
- DK
- Pd - Power Dissipation
- 83 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
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последние обзоры
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Yes, they are all here. :)
sudheer kumar sirra
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
fast delivery
Mike Ibarra
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
D2013UK Новости
03/14/2023
03/13/2023
03/13/2023
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