- номер части
- D2017UK
- категории
- RF MOSFET Transistors
- RoHS
- Техническая спецификация
- Описание
- RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-1GHz SE
D2017UK
Изображения только для справки
Характеристики
- категории
- RF MOSFET Transistors
- Configuration
- Single
- Gain
- 13 dB
- Id - Continuous Drain Current
- 2 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 5 W
- Package / Case
- Flangeless DP
- Pd - Power Dissipation
- 29 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
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последние обзоры
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
all is well. checked work. seller recommend.
Maurice E.
D2017UK Новости
03/14/2023
03/13/2023
03/13/2023
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