- номер части
- VT6X11T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT NPN+NPN 20VCEO 0.2A VMT6
VT6X11T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 20 V
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector-Emitter Saturation Voltage
- 0.12 V
- Configuration
- Dual
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 400 MHz
- Maximum DC Collector Current
- 200 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- NPN
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последние обзоры
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
VT6X11T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6X
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