- номер части
- VT6X12T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT NPN+NPN 50VCEO 0.1A VMT6
VT6X12T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 50 V
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector-Emitter Saturation Voltage
- 0.1 V
- Configuration
- Dual
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 350 MHz
- Maximum DC Collector Current
- 100 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- NPN
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последние обзоры
Very good!
Manuel MAde
Teşekkürler
Ashir Hussain
goods very well received very good quality
Fabrice Cubaynes
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Thank You all fine, packed very well
Ulrich Bundke
VT6X12T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6X
- VT6X12T2R интегрированный
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