номер части VT6X2T2R категории Bipolar Transistors - BJT RoHS Техническая спецификация VT6X2T2R Описание Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.1A 6PIN
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 100 mV Configuration Dual Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 560 at 1 mA, 6 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 350 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 150 mW Product Type BJTs - Bipolar Transistors Series VT6X2 Technology SI Transistor Polarity NPN