- номер части
- VT6X1T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT TR NPNX2 20V VCEO
VT6X1T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 20 V
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector-Emitter Saturation Voltage
- 0.12 V
- Configuration
- Dual
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 400 MHz
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Series
- VT6X1
- Technology
- SI
- Transistor Polarity
- NPN
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последние обзоры
thanks for resending, this item is good !
PLEMMENOS VAGELIS
everything as it is written in the description of the same deductible prodovtsu deserved
Aleksov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Hello! Order received, very happy. Thank you very much!
Flavia
packed pretty good, all is ok,-seller.
Julianah Yungkim
VT6X1T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6X
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