номер части 2SA2072TLQ категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA2072TLQ Описание Bipolar Transistors - BJT TRNSISTR 60V 3A PNP HI VOLT DSCHRG
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 60 V Collector- Emitter Voltage VCEO Max - 60 V Collector-Emitter Saturation Voltage - 200 mV Configuration Single DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 270 at - 100 mA, - 2 V Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 180 MHz Maximum DC Collector Current - 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Series 2SA2072 Technology SI Transistor Polarity PNP